InAs(111)A homoepitaxy with molecular beam epitaxy
نویسندگان
چکیده
منابع مشابه
On the Phase Shift of Reflection High Energy Electron Diffraction Intensity Oscillations during Ge(001) Homoepitaxy by Molecular Beam Epitaxy
We have conducted a systematic investigation of the phase shift of the Reflection High Energy Electron Diffraction (RHEED) intensity oscillations during homoepitaxy of Ge(001) by molecular beam epitaxy for a wide range of diffraction conditions. Our results show that for small incidence angles with a beam azimuth several degrees away from the <110> crystallographic symmetry direction, the phase...
متن کاملBasics of Molecular Beam Epitaxy (MBE)
A brief introduction to the MBE technique is presented with main attention to the elemental source MBE. A discussion on the effusion cell as beam source is shortly given starting from ideal cases to real cells homogeneity problems. A short review regarding the thermodynamic approach to the MBE is pointed out. Focusing on the possibility that, despite the fact that MBE processes occur under stro...
متن کاملCharacterization of Multiferroic Thin Films Generated with Molecular Beam Epitaxy
Magnetoelectric multiferroic thin films exhibit coupled ferromagnetism and ferroelectricity. Interest in these multiferroics stems from their potential applications in spin-based computing and novel information storage methods. Through characterization with x-ray diffraction (XRD), atomic force microscopy (AFM), and vibrating sample magnetometry (VSM), the growth of multiferroic films with mole...
متن کاملCharacterization of Multiferroic Thin Films Generated with Molecular Beam Epitaxy
Magnetoelectric multiferroic thin films exhibit coupled ferromagnetism and ferroelectricity. Interest in these multiferroics stems from their potential applications in spin-based computing and novel information storage methods. Through characterization with x-ray diffraction (XRD), atomic force microscopy (AFM), and vibrating sample magnetometry (VSM), the growth of multiferroic films with mole...
متن کاملMolecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing
We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get some insight into its structural properties. Stationary and time-resolved photoluminescence shows ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology B
سال: 2019
ISSN: 2166-2746,2166-2754
DOI: 10.1116/1.5127857